, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 maximum ratings riling drain-source voltage gate-source voltage drain current gate current total device dissipation <5 ta =? 25*0 derate above 26c operating and storage channel temperature range symbol vds vgs id ig pd tchannel' tstn value 25 7.0 30 10 300 -65 to -m76 unit vdc vdc madc mado mw ?c MFE140 to-72 dual-gate mosfet fm amplifier n.channel ? depletion electrical characteristics (ta = 26c unless otherwise noted.) characteristic symbol min typ off characteristics drain-source breakdown voltage up = 10 fiadc, vs = 0, vgi = -4.0 vdc, vqz = +4.0 vdc) gate 1-sourca breakdown voltage (igi - io/jadc, vgzs = "i gate 2-source breakdown voltage iiq2 = 10fiadc, vq2s - 0) gate 1 leakage current (vgis = b.o vdc, vg2s - o, vds - ) gate 2 leakage current rvg2s - a vdc, vgis - o. vds - o) gate 1 to source cutoff voltage |vds - 15 vdc, vg2s - 4.0 vdc, id - 200 /ladc) gate 2 to source cutoff voltage (vds - ib vdc, vgis - 0, id = 200 /iado) v(br)dsx v(br)g1so v(br)g2so 'g1ss iq2ss vqis(off) vg2s(off) 26 7.0 7.0 ? ? ? ? ? ? ? ? _ ? ? ? 20 20 20 20 -4.0 -4.0 vdc vdc vdc nadc nadc vdc vdc on characteristics zero-gate-voltage drain current (vds = ? vdc. vqzs - o, vb2s = 4.o vdc) idss 3.0 10 30 madc small-signal characteristics forward transfer admittance (gate 1 connected to drain) (vos - 15 vdc, vg2s - 4-0 vdo, id - 1c madc. f - 1.0 khz) input capacitance (vds - is vdc. vgjs - *.o vdc, id = idss. f - 1.0 mhz) reverse transfer capacitance (vds - is vdc. vq2s - 4.o vdc, id = idss. - i. mhz) output capacitance (vds - 15 vdc. vq2s - 4.0 vdc, id ?= idss. f - i-o mhz) ivfsl c|ss ^rss coss 10 ? ? ? ? 4.6 0.023 2.e 20 7.0 0.06 4.0 mmhos pf pf pf functional characteristics noise figure (figure 8) (see test circuit in figure 11) common source power gain (figure 7) (see ten circuit in figure 11) level of unwanted signal for 1,0% cross modulation (figure 10) (see test circuit in figure 11) nf qps ? ? 20 ? 2.5 23 46 3.6 ? ? db db mv nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MFE140 electrical characteristics (continued) !ta = 2sc unless otherwise noted.) characteristic common-source conversion power gain (gate 1 or gate 2 injection. figure 121 (see test circuit in figure 13) (signal frequency = 100 mhz, local oscillator frequency - 110.7 mhz) 1/2 i.f. rejection (see test circuit in figure 13) symbol gc "2 ifrej mln 16 ? typ 18.5 60 max ? ? unit db db common-source admittance parameters (vos- is vdc, vqjs ? 4-0 vdc, id ? 6.0 madcl figure 1 -input admittance figure 2 - reverse transfer admittance 1.2 1, a " l*u i 04 * 02 '. *- ?*m ?-?!? ^r* hub != ^ ?* ?? y / *t _^***' b-a/ / j ^ gii / / ^ ^ 0 40 60 80 100 2qo 30 f,frequency(mhi) ance (jnmh&s] stance [mmhoi] 30000 i i i hj 0 20 y so 010 3 * 10 oqds 0 0 d ??^ ^ ^ ** s s / ' *n <>! / / / ^ 0 40 ? co bo 100 200 30 i. frequency (mhi) 0030 n?!s 0020 001b 0.01 dc o.oq5 0 0 figure 3 - forward transfer admittance figure 4 - output admittance n* forward transfer conductance in? ho <*. -* ^. ^^ ""?^ k^ sfc, x , -, *- -^.^bfi "^^ y^ / /-'l! / / ^^>^_ ^ ^ "*s^ 0 40 0 bo 100 200 30 f. frequency (mhz) 6.0 5(1 | 4.0 | 3.0 2.0 1.0 0 0 0.7 'f. 06 i" t -4 a o 3 tt3 i 02 '?, 0 forward transfer admittance (vds- 15vdc.(? 1,0khz) figure e-gate 1 -1.0 0 1.0 2.0 vms. bate i source voltage (volts) 99 100 1. frequency (mhil figure 6 -gati 2 yisz, gate 2 forward t8aotfer admittance limhoil 2 i / f_ 1 a fa y ^^ / // / / s x x1 f* f*- ' ?*^ - s "s, ^ x ?s. ^ ^ -1 ' \f ?^ / s ^ ^ ov ^= is- ^ / v^ v s s ^ 10v 4.0v 2.0v 1.0v s x ^x, "-? x. ^s ?111^ ^ a*? 10v 4v 2 d -1 -2.0 -1.0 0 1.0 2.0 9.0 ? vrj2s.ga7e2souncevoltaoe(?olt!!
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